Graphene-Based FET Prepared by Mechanical Exfoliation Technique for High-Performance

Graphene-Based FET Prepared by Mechanical Exfoliation Technique for High-Performance

Authors- Laith M. Al Taan, Nawfal Y. Jamil, Duha H. Al Refaei

Abstract-This study aims to prepare high-quality graphene using mechanical exfoliation and to fabricate a Field-Effect Transistor (FET) on a silicon substrate. The graphene’s structural and electronic properties were evaluated through Raman spectroscopy, showing a prominent G Band (~1580 cm⁻¹) and 2D Band (~2700 cm⁻¹), indicating high-quality, monolayer graphene with low defect density. The transfer I-V characteristics reveal effective current modulation with high electron mobility, leading to faster switching speeds and lower power consumption. The Id-Vg characteristics demonstrate a distinct threshold voltage (0.75V) and highlight the importance of minimizing hysteresis for reliable device performance. The results confirm the efficacy of the exfoliation method in producing graphene suitable for high-performance FET applications.

DOI: /10.61463/ijset.vol.13.issue1.129